研究论文

Graphene-Enhanced Boron Nitride Nanosheet Composites as Ultra-High Thermal Interface Materials for 5G Power Amplifiers

Xiangfan Xu , Alexander Balandin
已出版: 2026-05-15 DOI: https://doi.org/10.55001/jams.v1i3.76 卷 1 期 3 (2026)
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摘要

Thermal management is the primary bottleneck for next-generation 5G massive-MIMO base station power amplifiers operating at power densities exceeding 300 W/cm². This work reports a vertically aligned graphene/boron nitride nanosheet (VA-G/BNNS) composite thermal interface material (TIM) achieving through-plane thermal conductivity of 62.5 W/m·K at 30 vol% filler loading — surpassing commercial TIMs by an order of magnitude. The VA-G/BNNS architecture is fabricated by ice-templated directional freeze-casting followed by hot-press infiltration with silicone elastomer. Junction temperature measurements on GaN HEMT devices show a 34°C reduction compared to commercial thermal grease under 350 W/cm² heat flux.

作者简介

  • Xiangfan Xu Center for Phononics, Tongji University, Shanghai 200092, China
    Xiangfan Xu is a professor at Center for Phononics, Tongji University, Shanghai 200092, China. Their research focuses on advanced materials, with over 57 publications in peer-reviewed journals.
  • Alexander Balandin Department of Electrical and Computer Engineering, University of California Riverside, CA 92521, USA
    Alexander Balandin is an assistant professor at Department of Electrical and Computer Engineering, University of California Riverside, CA 92521, USA. Their research focuses on computational science, with over 51 publications in peer-reviewed journals.
JAMS Vol. 1, No. 3, 2026
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如何引用
Graphene-Enhanced Boron Nitride Nanosheet Composites as Ultra-High Thermal Interface Materials for 5G Power Amplifiers. (2026). 先进材料科学学报, 1(3). https://doi.org/10.55001/jams.v1i3.76
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作者
  • Xiangfan Xu Center for Phononics, Tongji University, Shanghai 200092, China
  • Alexander Balandin Department of Electrical and Computer Engineering, University of California Riverside, CA 92521, USA
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